Transparent and flexible field-effect transistors and mem-transistors with electroactive layers of solution-processed organic polyradicals

TL;DR

This paper introduces transparent, flexible, solution-processed polyradical-based transistors that combine memristor and transistor functionalities, achieving high on/off ratios and tunable charge transport, advancing organic electronics.

Contribution

It reports the first polyradical field-effect transistors with high on/off ratios and memristor capabilities, using solution-processed organic polyradicals in vertical architectures.

Findings

Achieved on/off ratios higher than 10^3 in PR-FETs.

Demonstrated transparent and flexible PR-FET devices.

PR-FETs combine memristor and transistor functions.

Abstract

Solution processed polymers are at the core of organic electronics. Polyradicals (polymers in which each repeating unit contains an unpaired spin) are unique alternatives to their p-conjugated, semiconducting counterparts. Unique of polyradicals are tunable charge states localized at their repeating units, which enable electrically switchable charge transport regimes. Tremendous efforts were focused on polyradical memristors and batteries. Notwithstanding recent progress in doping, polyradical field-effect transistors (PR-FETs) have not been reported. Here, we show that vertical architectures, with drain-source contacts sandwiching the active layer of a strongly correlated 6-oxoverdazyl polyradical, leads to on/off ratios higher than 10+3 in p-type PR-FETs. Hole injection occurs via contact doping by tunable charge states at the polyradical-electrode interface. Transparent and flexible PR-FETs are also reported. PR-FETs are superior to existing organic FETs as they combine memristor and transistor functions in one mem-transistor device, offering a unique potential for the circuital simplification of organic electronics.