Comment on Crystallite size dependent exchange bias in MgFe2O4 thin films on Si (100), Journal of Applied Physics, volume 124, page 053901, 2018
Himadri Roy Dakua

TL;DR
This paper critically examines previous reports of exchange bias effects in MgFe2O4 thin films, highlighting inconsistencies and contradictions in the data presented for a 132 nm thick film.
Contribution
It provides a critical comment identifying contradictions in prior experimental data on exchange bias in MgFe2O4 thin films.
Findings
Contradictions in reported data for 132 nm MgFe2O4 film
Highlights inconsistencies in temperature and field dependence results
Questions the validity of previous exchange bias measurements
Abstract
K. Mallick and P. S. A. Kumar had reported exchange bias effect in Mg-ferrite thin films, deposited on Si substrate (with a buffer layer of MgO) using Pulsed Laser Deposition (PLD) technique. The authors had presented the temperature dependence exchange bias effect, field dependence exchange bias effect and training effect of a selected Magnesium ferrite thin film of thickness 132 nm. These studies were followed by the film thickness dependence of exchange bias effect. However, the data presented for the 132 nm thick film shows mutually contradicting values in each and every figures. Here, I point out these highly self-contradicting data in this comment.
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Taxonomy
TopicsSurface Roughness and Optical Measurements · Thin-Film Transistor Technologies · Ion-surface interactions and analysis
