Electron-hole asymmetry in electrical conductivity of low-fluorinated graphene: Numerical study

TL;DR

This study uses numerical simulations to explore how low levels of fluorination cause electron-hole asymmetry in graphene's electrical conductivity, revealing effects of localized states and temperature-dependent transport regimes.

Contribution

It provides a detailed numerical analysis of electron transport in low-fluorinated graphene, highlighting the role of localized states and asymmetry not extensively studied before.

Findings

Pronounced electron-hole asymmetry due to quasi-resonant scattering

Local minima and maxima of resistance near localized state energies

Comparison with experimental resistance measurements

Abstract

By using the real-space Green-Kubo formalism we study numerically the electron transport properties of low-fluorinated graphene. At low temperatures the diffuse transport regime is expected to be prevalent, and we found a pronounced electron-hole asymmetry in electrical conductivity as a result of quasi-resonant scattering on the localized states. For the finite temperatures in the variable-range hopping transport regime the interpretation of numerical results leads to the appearance of local minima and maxima of the resistance near the energies of the localized states. A comparison with the experimental measurements of the resistance in graphene samples with various fluorination degrees is discussed.