Rapid high-fidelity spin state readout in Si/SiGe quantum dots via radio-frequency reflectometry

TL;DR

This paper demonstrates rapid, high-fidelity spin and charge state readout in Si/SiGe quantum dots using radio-frequency reflectometry, overcoming previous challenges and enabling faster quantum error correction.

Contribution

The authors implement radio-frequency reflectometry in Si/SiGe quantum dots with minimal device modifications, achieving high-fidelity, fast readout of charge and spin states.

Findings

Charge state readout fidelity above 99.9% in 300 ns

Maximum singlet/triplet fidelities of 82.9% and 99.0% in microsecond timescales

Single-spin readout achieved in microsecond-scale integration times

Abstract

Silicon spin qubits show great promise as a scalable qubit platform for fault-tolerant quantum computing. However, fast high-fidelity readout of charge and spin states, which is required for quantum error correction, has remained elusive. Radio-frequency reflectometry enables rapid high-fidelity readout of GaAs spin qubits, but the relatively large resistances and capacitances of accumulation-mode Si quantum dot devices have made radio-frequency reflectometry challenging in these platforms. In this work, we implement radio-frequency reflectometry in a Si/SiGe quantum dot device with overlapping gates by making minor device-level changes that eliminate these challenges. We demonstrate charge state readout with a fidelity above 99.9% in an integration time of 300 ns. We measure the singlet and triplet states of a double quantum dot via both conventional Pauli spin blockade and a charge latching mechanism, and we achieve maximum fidelities of 82.9% and 99.0% in 2.08 $\mu$s and 1.6 $\mu$s integration times, respectively. We also use radio-frequency reflectometry to perform single-shot readout of single-spin states via spin-selective tunneling in microsecond-scale integration times.