Anisotropies of the g-factor tensor and diamagnetic coefficient in crystal-phase quantum dots in InP nanowires

TL;DR

This study investigates the anisotropic g-factor tensor and diamagnetic coefficients in crystal-phase quantum dots within InP nanowires, providing fundamental parameters crucial for quantum device applications.

Contribution

It reports the first detailed measurement and analysis of g-factor tensor anisotropy and diamagnetic coefficients in WZ/ZB crystal-phase quantum dots in InP nanowires.

Findings

Determined electron and hole g-factor tensors in WZ/ZB quantum dots.

Measured exciton diamagnetic coefficients under various magnetic field configurations.

Provided insights for band gap engineering and spin control in nanowire quantum structures.

Abstract

Crystal-phase low-dimensional structures offer great potential for the implementation of photonic devices of interest for quantum information processing. In this context, unveiling the fundamental parameters of the crystal phase structure is of much relevance for several applications. Here, we report on the anisotropy of the g-factor tensor and diamagnetic coefficient in wurtzite/zincblende (WZ/ZB) crystal-phase quantum dots (QDs) realized in single InP nanowires. The WZ and ZB alternating axial sections in the NWs are identified by high-angle annular dark-field scanning transmission electron microscopy. The electron (hole) g-factor tensor and the exciton diamagnetic coefficients in WZ/ZB crystal-phase QDs are determined through micro-photoluminescence measurements at low temperature (4.2 K) with different magnetic field configurations, and rationalized by invoking the spin-correlated orbital current model. Our work provides key parameters for band gap engineering and spin states control in crystal-phase low-dimensional structures in nanowires.