Atomically Controlled Tunable Doping in High Performance WSe2 Devices

TL;DR

This study demonstrates a precise, temperature-controlled oxidation process to enhance contact resistance and device performance in WSe2 transistors by forming WO3-x layers that enable tunable doping.

Contribution

It introduces a novel room-temperature oxidation method for monolayer control of WSe2 doping, significantly reducing contact resistance in high-performance devices.

Findings

Achieved low contact resistance of ~528 ohm-um.

Recorded high on-state current of 320 uA/um at -1V.

Demonstrated temperature-dependent oxidation control.

Abstract

Two-dimensional transitional metal dichalcogenide (TMD) field-effect transistors (FETs) are promising candidates for future electronic applications, owing to their excellent transport properties and potential for ultimate device scaling. However, it is widely acknowledged that substantial contact resistance associated with the contact-TMD interface has impeded device performance to a large extent. It has been discovered that O2 plasma treatment can convert WSe2 into WO3-x and substantially improve contact resistances of p-type WSe2 devices by strong doping induced thinner depletion width. In this paper, we carefully study the temperature dependence of this conversion, demonstrating an oxidation process with a precise monolayer control at room temperature and multilayer conversion at elevated temperatures. Furthermore, the lateral oxidation of WSe2 under the contact revealed by HR-STEM leads to potential unpinning of the metal Fermi level and Schottky barrier lowering, resulting in lower contact resistances. The p-doping effect is attributed to the high electron affinity of the formed WO3-x layer on top of the remaining WSe2 channel, and the doping level is found to be dependent on the WO3-x thickness that is controlled by the temperature. Comprehensive materials and electrical characterizations are presented, with a low contact resistance of ~528 ohm-um and record high on-state current of 320 uA/um at -1V bias being reported.