Electric-field control of spin transitions in molecular compounds
O. I. Utesov, S. Burdin, P. Rosa, M. Gonidec, L. Poggini, and S. V., Andreev

TL;DR
This paper introduces a theoretical model demonstrating how external electric fields can control spin transitions in molecular layer stacks, potentially enabling temperature and voltage-tunable organic memory devices.
Contribution
It presents a novel theoretical framework that explains existing phenomena and proposes electric-field control of spin states in molecular compounds, advancing organic memory technology.
Findings
Model captures thermal hysteresis and crossovers in spin transitions
Electric field can modulate spin states in molecular layers
Potential for temperature and voltage-controlled organic memory
Abstract
We present a theoretical model of spin transitions in stacks of molecular layers. Our model captures the already established physics of these systems (thermal hysteretic transitions and crossovers) and suggests a way towards in situ control of this physics by means of an external electric field. Our results pave the way toward both temperature and voltage controllable organic memory.
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