Atomistic theory of electronic and optical properties of InAsP/InP nanowire quantum dots
Moritz Cygorek, Marek Korkusinski, Pawel Hawrylak

TL;DR
This paper develops an atomistic theoretical model to analyze the electronic and optical properties of InAsP quantum dots in InP nanowires, accounting for atomistic details, composition variations, and quantum confinement effects.
Contribution
It introduces a combined atomistic approach using valence-force-field, tight-binding, and configuration-interaction methods to accurately predict properties of InAsP nanowire quantum dots.
Findings
Electronic shells resemble parabolic quantum confinement.
Emission line alignment matches zincblende phase dots.
Dot-to-dot fluctuations caused by As atom distribution.
Abstract
We present here an atomistic theory of the electronic and optical properties of hexagonal InAsP quantum dots in InP nanowires in the wurtzite phase. These self-assembled quantum dots are unique in that their heights, shapes, and diameters are well known. Using a combined valence-force-field, tight-binding, and configuration-interaction approach we perform atomistic calculations of single-particle states and excitonic, biexcitonic and trion complexes as well as emission spectra as a function of the quantum dot height, diameter and As versus P concentration. The atomistic tight-binding parameters for InAs and InP in the wurtzite crystal phase were obtained by ab initio methods corrected by empirical band gaps. The low energy electron and hole states form electronic shells similar to parabolic or cylindrical quantum confinement, only weakly affected by hexagonal symmetry and As…
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