A linear combination of atomic orbitals (LCAO) model for deterministically placed acceptor arrays in silicon
Jianhua Zhu, Wei Wu, A.J.Fisher

TL;DR
This paper introduces a tight-binding LCAO model for acceptor arrays in silicon, exploring topological edge states influenced by electrostatic effects, spin-orbit coupling, and chain termination, with implications for quantum device design.
Contribution
The paper develops a novel LCAO-based tight-binding model for acceptor arrays in silicon, incorporating strong spin-orbit coupling and electrostatic effects, and investigates topological states in these systems.
Findings
Topological edge states depend on electrostatic effects and chain dimerisation.
Screening electrostatic interactions localizes topological states at chain ends.
Chain termination effects on topological states are non-trivial and depend on bond lengths.
Abstract
We develop a tight-binding model based on linear combination of atomic orbitals (LCAO) methods to describe the electronic structure of arrays of acceptors, where the underlying basis states are derived from an effective-mass-theory solution for a single acceptor in either the spherical approximation or the cubic model. Our model allows for arbitrarily strong spin-orbit coupling in the valence band of the semiconductor. We have studied pairs and dimerised linear chains of acceptors in silicon in the `independent-hole' approximation, and investigated the conditions for the existence of topological edge states in the chains. For the finite chain we find a complex interplay between electrostatic effects and the dimerisation, with the long-range Coulomb attraction of the hole to the acceptors splitting off states localised at the end acceptors from the rest of the chain. A further pair of…
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