High frequency guided mode resonances in mass-loaded, thin film gallium nitride surface acoustic wave devices

TL;DR

This paper demonstrates high-frequency, high-Q resonators in thin film gallium nitride using guided mode resonances, enabling efficient excitation and potential for integrated RF devices.

Contribution

It introduces a novel approach to achieve high-frequency RF resonances in GaN thin films by exploiting acoustic guided modes with high quality factors.

Findings

Resonances above 3 GHz achieved in GaN thin films

High quality factors enabled by energy trapping from mass loading

Potential for monolithic integration of RF front-ends

Abstract

We demonstrate high-frequency (> 3 GHz), high quality factor radio frequency (RF) resonators in unreleased thin film gallium nitride (GaN) on sapphire and silicon carbide substrates by exploiting acoustic guided mode (Lamb wave) resonances. The associated energy trapping, due to mass loading from the gold electrodes, allows us to efficiently excite these resonances from a 50 $\Omega$ input. The higher phase velocity, combined with lower electrode damping, enables high quality factors with moderate electrode pitch, and provides a viable route towards high-frequency piezoelectric devices. The GaN platform, with its ability to guide and localize high-frequency sound on the surface of a chip with access to high-performance active devices, will serve as a key building block for monolithically integrated RF front-ends.