Quantum confinement of the Dirac surface states in topological-insulator nanowires
Felix M\"unning, Oliver Breunig, Henry F. Legg, Stefan Roitsch,, Dingxun Fan, Matthias R\"o{\ss}ler, Achim Rosch, Yoichi Ando

TL;DR
This paper demonstrates the direct observation of quantum-confined Dirac surface states in topological insulator nanowires, revealing their sub-band structure through resistance measurements, which is crucial for future topological quantum computing applications.
Contribution
It provides the first experimental evidence of Dirac sub-bands in TI nanowires by using thin nanowires and gating, confirming theoretical predictions.
Findings
Resistance peaks as a function of gate voltage indicate Dirac sub-band structure.
Non-equidistant resistance peaks are signatures of quantum confinement.
Gating allows manipulation of the Dirac surface states in TI nanowires.
Abstract
The non-trivial topology of the three-dimensional (3D) topological insulator (TI) dictates the appearance of gapless Dirac surface states. Intriguingly, when a 3D TI is made into a nanowire, a gap opens at the Dirac point due to the quantum confinement, leading to a peculiar Dirac sub-band structure. This gap is useful for, e.g., future Majorana qubits based on TIs. Furthermore, these Dirac sub-bands can be manipulated by a magnetic flux and are an ideal platform for generating stable Majorana zero modes (MZMs), which play a key role in topological quantum computing. However, direct evidence for the Dirac sub-bands in TI nanowires has not been reported so far. Here we show that by growing very thin (40-nm diameter) nanowires of the bulk-insulating topological insulator (BiSb)Te and by tuning its chemical potential across the Dirac point with gating, one can…
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