Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films

TL;DR

This paper reports the successful self-assembly of well-separated AlN nanowires on sputtered TiN films at high temperature, with high crystalline quality and potential for deep ultraviolet optoelectronic applications.

Contribution

It demonstrates a novel method for growing well-separated AlN nanowires on TiN films at high temperature, avoiding coalescence and enabling optoelectronic device integration.

Findings

Nanowires are well separated without coalescence.

High crystalline quality evidenced by near band edge emission.

TiN films are stoichiometric and metallic, beneficial for device applications.

Abstract

We demonstrate the self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire. This choice of substrate allows growth at an exceptionally high temperature of 1180 {\deg}C. In contrast to previous reports, the nanowires are well separated and do not suffer from pronounced coalescence. This achievement is explained by sufficient Al adatom diffusion on the substrate and the nanowire sidewalls. The high crystalline quality of the nanowires is evidenced by the observation of near band edge emission in the cathodoluminescence spectrum. The key factor for the low nanowire coalescence is the TiN film, which spectroscopic ellipsometry and Raman spectroscopy indicate to be stoichiometric. Its metallic nature will be beneficial for optoelectronic devices employing these nanowires as the basis for (Al,Ga)N/AlN heterostructures emitting in the deep ultraviolet spectral range.