The Carbon State in Dilute Germanium Carbides
I. A. Gulyas, C. A. Stephenson, Qian Meng, S. R. Bank, M. A. Wistey

TL;DR
This study investigates how substitutional carbon in dilute germanium carbide creates a direct, optically active bandgap, significantly alters the band structure, and exhibits unique localization and anisotropy properties.
Contribution
It provides a detailed projection analysis of the electronic states in Ge:C, revealing the nature of the new conduction band and its weak Ge character, which is novel for highly mismatched alloys.
Findings
Carbon creates a direct, optically active conduction band in Ge:C.
The new conduction band has almost no Ge band character.
C sites mimic uncharged vacancies and perturb the entire band structure.
Abstract
Conduction and valence band states for the highly mismatched alloy (HMA) Ge:C are projected onto Ge crystal states, Ge vacancy states, and Ge/C atomic orbitals, revealing that substitutional carbon not only creates a direct bandgap, but the new conduction band is optically active. Overlap integrals of the new Ge:C conduction band with bands of pure Ge shows the new band has almost no Ge band character. C sites structurally mimic uncharged vacancies in the Ge lattice, similar to Hjalmarson's model for other HMAs. C perturbs the entire Ge band structure even at the deepest crystal core energy levels. Projection onto atomic sites shows relatively weak localization compared with other HMAs, but does show a strong anisotropy in probability distribution. L-valley conduction band states in Ge are ruled out as major contributors to the carbon state in Ge:C, both by weak inner products between…
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Taxonomy
TopicsSemiconductor materials and interfaces · Semiconductor materials and devices · Surface and Thin Film Phenomena
