Integration of the Noncollinear Antiferromagnetic Metal Mn3Sn onto Ferroelectric Oxides for Electric-Field Control

TL;DR

This study demonstrates the integration of Mn3Sn antiferromagnetic metal onto ferroelectric oxides, enabling electric-field control of topological magnetic properties for low-power spintronic applications.

Contribution

It reports the successful growth of Mn3Sn thin films on ferroelectric substrates and shows electric-field manipulation of their anomalous Hall effect, advancing topological antiferromagnetic spintronics.

Findings

Large anomalous Hall effect comparable to bulk Mn3Sn

Electric-field control of Hall effect in thin films

Presence of Weyl state signatures in thin films

Abstract

Non-collinear antiferromagnetic materials have received dramatically increasing attention in the field of spintronics as their exotic topological features such as the Berry-curvature-induced anomalous Hall effect and possible magnetic Weyl states could be utilized in future topological antiferromagnetic spintronic devices. In this work, we report the successful integration of the antiferromagnetic metal Mn3Sn thin films onto ferroelectric oxide PMN-PT. By optimizing growth, we realized the large anomalous Hall effect with small switching magnetic fields of several tens mT fully comparable to those of bulk Mn3Sn single crystals, anisotropic magnetoresistance and negative parallel magnetoresistance in Mn3Sn thin films with antiferromagnetic order, which are similar to the signatures of the Weyl state in bulk Mn3Sn single crystals. More importantly, we found that the anomalous Hall effect in antiferromagnetic Mn3Sn thin films can be manipulated by electric fields applied onto the ferroelectric materials, thus demonstrating the feasibility of Mn3Sn-based topological spintronic devices operated in an ultralow power manner.