Role of the electron-phonon coupling in tuning the thermal boundary conductance at metal-dielectric interfaces by inserting ultrathin metal interlayers
S.M. Oommen, S. Pisana

TL;DR
This study investigates how inserting ultrathin metal interlayers affects thermal boundary conductance at metal-dielectric interfaces, highlighting the role of electron-phonon coupling and phonon dispersion in heat transfer modulation.
Contribution
It demonstrates the impact of electron-phonon coupling strength on the conductance transition sharpness and introduces a hybrid inelastic scattering model for accurate predictions.
Findings
Tantalum interlayers cause a sharp conductance transition within ~1 nm.
Nickel interlayers produce a local minimum in conductance with increasing thickness.
A hybrid inelastic scattering model accurately predicts conductance behavior.
Abstract
Varying the thermal boundary conductance at metal-dielectric interfaces is of great importance for highly integrated electronic structures such as electronic, thermoelectric and plasmonic devices where heat dissipation is dominated by interfacial effects. In this paper we study the modification of the thermal boundary conductance at metal-dielectric interfaces by inserting metal interlayers of varying thickness below 10 nm. We show that the insertion of a tantalum interlayer at the Al/Si and Al/sapphire interfaces strongly hinders the phonon transmission across these boundaries, with a sharp transition and plateau within ~1 nm. We show that the electron-phonon coupling has a major influence on the sharpness of the transition as the interlayer thickness is varied, and if the coupling is strong, the variation in thermal boundary conductance typically saturates within 2 nm. In contrast,…
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