Modelling Resistive and Phase Change Memory with Passive Selector Arrays -- A Matlab Tool

TL;DR

This paper introduces a MATLAB-based modelling tool for simulating memristor crossbar arrays with passive selectors, enabling analysis of electrical behavior and design optimization for memory and neuromorphic applications.

Contribution

The authors developed an optimized, parallel MATLAB tool for simulating memristor arrays, facilitating larger, more practical designs for data storage and neuromorphic computing.

Findings

Effect of line resistance, array size, and voltage scheme on sense margin

Impact of diode parameters and temperature on electrical behavior

Influence of array biasing on dissipated current

Abstract

Memristor devices are crucial for developing neuromorphic computers and next-generation memory technologies. In this work, we provide a comprehensive modelling tool for simulating static DC reading operations of memristor crossbar arrays that use passive selectors with matrix algebra in MATLAB. The software tool was parallel coded and optimized to run with personal computers and distributed computer clusters with minimized CPU and memory consumption. Using the tool, we demonstrate the effect of changing the line resistance, array size, voltage selection scheme, selector diode's ideality factor, reverse saturation current, temperature and sense resistance on the electrical behavior and expected sense margin of one-diode-one-resistor crossbar arrays. We then investigate the effect of single and dual side array biasing and grounding on the dissipated current throughout the array cells. The tool we offer to the memristor community and the studies we present enables the design of larger and more practical memristor arrays for application in data storage and neuromorphic computing.