Considerations for the design of a heterojunction bipolar transistor solar cell

TL;DR

This paper analyzes the design of heterojunction bipolar transistor solar cells (HBTSCs), highlighting how to optimize their structure for better performance using a drift-diffusion model.

Contribution

It provides a detailed analysis of HBTSC design parameters and proposes optimization strategies to mitigate carrier injection effects, advancing multi-terminal solar cell technology.

Findings

Carrier injection degrades open-circuit voltage but can be mitigated

Base layer design is crucial for device optimization

Design requirements are feasible with current III-V technology

Abstract

Independent current extraction in multi-junction solar cells has gained attention in recent years because it can deliver higher annual energy yield and can work for more semiconductor material combinations than the more established series-connected multi-junction technology. The heterojunction bipolar transistor solar cell concept (HBTSC) was recently proposed as a simple, compact and cost-effective multi-terminal device structure that allows independent current extraction. It consists of only three main layers: emitter, base and collector. In this work we use a drift-diffusion model to analyze important aspects in the design of an HBTSC structure based on typical III-V semiconductor materials. We find that carrier injection from the emitter into the collector (transistor effect) degrades the open-circuit voltage of the top sub-cell, but this risk can be eliminated by optimizing the base design. We find requirements for the base layer which are, in principle, achievable in the context of current III-V semiconductor technology.