Plane-wave many-body corrections to the conductance in bulk tunnel junctions
Alberto Dragoni, Beno\^it Skl\'enard, Fran\c{c}ois Triozon and, Valerio Olevano

TL;DR
This study investigates how advanced many-body and hybrid functional corrections to electronic structure calculations affect the conductance in bulk metal-insulator-metal junctions, showing improved agreement with experimental data especially at larger insulator thicknesses.
Contribution
It demonstrates that beyond-DFT corrections, particularly HSE and COHSEX, significantly reduce conductance predictions, aligning them more closely with experimental results in tunneling regimes.
Findings
Beyond-DFT corrections reduce zero-bias conductance.
HSE and COHSEX improve agreement with experiments.
Wavefunction corrections impact conductance more than energy corrections.
Abstract
The conductance of bulk metal--insulator--metal junctions is evaluated by the Landauer formula using an \textit{ab initio} electronic structure calculated using a plane-waves basis set within density-functional theory (DFT) and beyond, i.e.\ including exact non-local exchange using hybrid functional (HSE) or many-body and COHSEX quasiparticle (QP) schemes. We consider an Ag/MgO/Ag heterostructure model and we focus on the evolution of the zero-bias conductance as a function of the MgO film thickness. Our study shows that the correction of the electronic structure beyond semi-local density functionals goes in the right direction to improve the agreement with experiments, significantly reducing the zero-bias conductance. This effect becomes more evident at larger MgO thickness, that is in increasing tunneling regime. We also observe that the reduction of the conductance seems…
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