Goos-H\"anchen Shifts in Graphene with Spatially Modulated Potential

TL;DR

This paper investigates how the Goos-H"anchen shifts in graphene with spatially modulated potential vary near extra Dirac points, revealing their dependence on energy, potential, angle, and width, and showing tunability of these shifts.

Contribution

It introduces a detailed analysis of Goos-H"anchen shifts near extra Dirac points in modulated graphene, highlighting their controllability through structural parameters.

Findings

Shifts can be negative or positive near extra Dirac points.

Shifts depend strongly on incident energy, potential height, angle, and width.

Width of the central region can tune the Goos-H"anchen shifts.

Abstract

Using the energy spectrum of graphene with spatially modulated potential, we study the Goos-H\"anshen shifts near extra Dirac points located at finite energy $\varepsilon=m\pi$, with $m$ integer. On both sides of such points, we show that the Goos-H\"anshen shifts can be negative as well as positive under various conditions. It is found that the shifts are strongly depending on the effects of the incident energy, potential height, incident angle and width of central region of unit cell. Such effects tell us that such width can be used to tune the shifts at the extra Dirac points.