Built-in electric field induces polarization rotation in bilayer BiFeO3/(Ba,Sr)TiO3 thin films

TL;DR

This study demonstrates that a built-in electric field from ferroelectric buffer layers can induce polarization rotation in bilayer BiFeO3/(Ba,Sr)TiO3 thin films, offering a new method to control ferroelectric polarization.

Contribution

It reveals how spontaneous polarization in buffer layers influences the crystal structure and polarization orientation in BFO layers, enabling polarization control without substrate modification.

Findings

Built-in electric field causes polarization rotation in BFO layers.

Lattice parameters decrease with increasing Ba content.

Rhombohedral angle approaches cubic structure with electric field influence.

Abstract

The crystal structure of BiFeO3/BaxSr1-xTiO3 (BFO/BST) heterostructures with x = 0.2, 0.6 and 0.8, grown on single-crystal MgO (001) substrate was investigated by x-ray diffraction and Raman spectroscopy in order to determine the influence of mismatch-induced strains and spontaneous polarization in BST buffer layers on BFO layers. The lattice parameter of the BFO layers was shown to decrease with increasing concentration of Ba ions, despite the increasing in-plain lattice parameters of tetragonal unit cells of BST layers. The rhombohedral angle of the crystal structure of BFO layers demonstrates an increase towards the ideal cubic perovskite structure with the appearance of the built-in electric field, induced by the spontaneous polarization in buffer layers. This result provides a remarkable tool for the control of polarization in BFO layers and other ferroelectric films in general, by changing the built-in electric field from ferroelectric buffer layer without changing a single crystal substrate.