Growth and Strain Engineering of Trigonal Te for Topological Quantum Phases in Non-Symmorphic Chiral Crystals

TL;DR

This study demonstrates that curvature-induced strain in trigonal tellurium nanowires can be systematically controlled and used to explore topological quantum phases supported by non-symmorphic chiral symmetries.

Contribution

It introduces a method to grow strained trigonal tellurium nanowires via low-pressure vapor deposition and links curvature-induced strain to potential topological phases.

Findings

Curved nanowires exhibit broader and shifted Raman breathing modes.

High mobility electronic transport confirms crystalline quality.

Strain from curvature may enable exploration of topological phases.

Abstract

Strained trigonal Te has been predicted to host Weyl nodes supported by a non-symmorphic chiral symmetry. Using low-pressure physical vapor deposition, we systematically explored the growth of trigonal Te nanowires with naturally occurring strain caused by curvature of the wires. Raman spectra and high mobility electronic transport attest to the highly crystalline nature of the wires. Comparison of Raman spectra for both straight and curved nanowires indicates a breathing mode that is significantly broader and shifted in frequency for the curved wires. Strain induced by curvature during growth therefore may provide a simple pathway to investigate topological phases in trigonal Te.