Low-temperature electron-phonon interaction of quantum emitters in hexagonal Boron Nitride
Gabriele Grosso, Hyowon Moon, Christopher J. Ciccarino, Johannes, Flick, Noah Mendelson, Milos Toth, Igor Aharonovich, Prineha Narang, Dirk, R. Englund

TL;DR
This study investigates how phonons influence single-photon emitters in hexagonal Boron Nitride at cryogenic temperatures, revealing phonon mode-specific coupling efficiencies and their implications for quantum technology applications.
Contribution
It provides the first detailed experimental and theoretical analysis of phonon coupling in hBN quantum emitters, highlighting the role of in-plane optical phonons in emission enhancement.
Findings
In-plane optical phonons significantly increase emitter absorption.
Phonon coupling varies with defect charge states and modes.
Experimental results align with first-principles density-functional theory.
Abstract
Quantum emitters based on atomic defects in layered hexagonal Boron Nitride (hBN) have emerged as promising solid state 'artificial atoms' with atom-like photophysical and quantum optoelectronic properties. Similar to other atom-like emitters, defect-phonon coupling in hBN governs the characteristic single-photon emission and provides an opportunity to investigate the atomic and electronic structure of emitters as well as the coupling of their spin- and charge-dependent electronic states to phonons. Here, we investigate these questions using photoluminescence excitation (PLE) experiments at T=4K on single photon emitters in multilayer hBN grown by chemical vapor deposition. By scanning up to 250 meV from the zero phonon line (ZPL), we can precisely measure the emitter's coupling efficiency to different phonon modes. Our results show that excitation mediated by the absorption of one…
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