Improvement of temperature uniformity of induction-heated T-shape susceptor for high-temperature MOVPE
Kuang-Hui Li, Hamad S. Alotaibi, Xiaohang Li

TL;DR
This study uses simulation to improve temperature uniformity in induction-heated T-shape susceptors for high-temperature MOVPE by geometric modifications, achieving less than 5°C variation at 1900°C.
Contribution
The paper introduces specific geometric modifications to T-shape susceptors that significantly enhance temperature uniformity and heating efficiency in induction-based MOVPE processes.
Findings
Temperature variation less than 5°C at 1900°C
Optimized designs improve uniformity and efficiency
Geometric modifications effectively manipulate thermal transfer
Abstract
The induction heating is a common method applied in metalorganic vapor phase epitaxy (MOVPE) especially for higher-temperature growth conditions. However, compared to the susceptor heated by the multiple-zone resistant heater, the inductive-heated susceptor could suffer from severe thermal non-uniformity issue. In this simulation study, we propose to employ a T-shape susceptor design with various geometric modifications to significantly improve the substrate temperature uniformity by manipulating thermal transfer. Specifically, the thermal profile can be tailored by horizontal expansion and vertical elongation of the susceptor, or forming a cylindrical hollow structure at the susceptor bottom cylinder. Three optimized designs are shown with different temperature uniformity as well as various induction heating efficiencies. The temperature variation of the entire substrate surface can be…
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Taxonomy
TopicsGaN-based semiconductor devices and materials · Induction Heating and Inverter Technology · Silicon Carbide Semiconductor Technologies
