Nonlinear transport of ballistic Dirac electrons tunneling through a tunable potential barrier in graphene
Farhana Anwar, Andrii Iurov, Danhong Huang, Godfrey Gumbs, and Ashwani, Sharma

TL;DR
This paper investigates nonlinear and tunneling transport of Dirac electrons in graphene with a tunable potential barrier, revealing control mechanisms for tunneling resistance and electron filtering useful for device applications.
Contribution
It introduces a numerical approach validated against analytical models to analyze nonlinear transport in graphene with a tunable barrier, including effects of energy gaps and bias fields.
Findings
Bias field controls tunneling resistance peaks.
Energy gap suppresses head-on and skew transmission.
Gapless graphene filters electrons outside normal incidence.
Abstract
Dirac-electronic tunneling and nonlinear transport properties with both finite and zero energy bandgap are investigated for graphene with a tilted potential barrier under a bias. For validation, results from a finite-difference based numerical approach, which is developed for calculating transmission and reflection coefficients with a dynamically-tunable (time-dependent bias field) barrier-potential profile, are compared with those of both an analytical model for a static square-potential barrier and a perturbation theory using Wentzel-Kramers-Brillouin (WKB) approximation. For a biased barrier, both transmission coefficient and tunneling resistance are computed and analyzed, indicating a full control of the peak in tunneling resistance by bias field for a tilted barrier, gate voltage for barrier height, and energy for incoming electrons. Moreover, a finite energy gap in graphene is…
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