NbOx based memristor as artificial synapse emulating short term plasticity

TL;DR

This paper presents Nb/Nb2O5/Pt memristors that emulate biological synapses by exhibiting gradual conductance changes, demonstrating key synaptic functions like plasticity and facilitation for neuromorphic computing.

Contribution

The study introduces NbOx-based memristors capable of mimicking multiple synaptic functions, with interface tuning controlling their digital-analog behavior transition.

Findings

Memristors exhibit bipolar resistive switching with synapse-like properties.

Demonstrated short-term plasticity, spike rate dependent plasticity, and paired pulse facilitation.

Device interface tuning shifts behavior from digital to analog.

Abstract

Memristors can mimic the functions of biological synapse, where it can simultaneously store the synaptic weight and modulate the transmitted signal. Here, we report Nb/Nb2O5/Pt based memristors with bipolar resistive switching, exhibiting synapse like property of gradual and continuously change of conductance with subsequent voltage signals. Mimicking of basic functions of remembering and forgetting processes of biological brain were demonstrated through short term plasticity, spike rate dependent plasticity, paired pulse facilitation and post-titanic potentiation. The device layer interface tuning was shown to affect the device properties shift from digital to analog behaviour. Demonstration of basic synaptic functions in the NbOx based devices makes them suitable for neuromorphic applications.