A novel compound synapse using probabilistic spin-orbit-torque switching for MTJ based deep neural networks
Vaibhav Ostwal, Ramtin Zand, Ronald DeMara, Joerg Appenzeller

TL;DR
This paper introduces a new compound synapse utilizing stochastic spin-orbit torque switching in MTJ-based devices, demonstrating improved neuromorphic system performance through experimental validation and circuit simulations.
Contribution
It presents the first experimental demonstration of a compound synapse using stochastic SOT switching in MTJs and shows enhanced neural network accuracy with incremental pulse schemes.
Findings
Successful experimental demonstration of stochastic SOT-based compound synapse.
Improved MNIST recognition accuracy with incremental pulse scheme.
Potential for scalable, energy-efficient neuromorphic hardware.
Abstract
Analog electronic non-volatile memories mimicking synaptic operations are being explored for the implementation of neuromorphic computing systems. Compound synapses consisting of ensembles of stochastic binary elements are alternatives to analog memory synapses to achieve multilevel memory operation. Among existing binary memory technologies, magnetic tunneling junction (MTJ) based Magnetic Random Access Memory (MRAM) technology has matured to the point of commercialization. More importantly for this work, stochasticity is natural to the MTJ switching physics e.g devices referred as p-bits which mimic binary stochastic neurons. In this article, we experimentally demonstrate a novel compound synapse that uses stochastic spin-orbit torque (SOT) switching of an ensemble of nano-magnets that are located on one shared spin Hall effect (SHE) material channel, i.e. tantalum. By using a…
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