Enhancing Electrical Properties and Seebeck Effects of WO$_3$ Thin Films Using Spray Pyrolysis: Insights into the Conductivity and Carrier Type

TL;DR

This research enhances the electrical and thermoelectric properties of WO$_3$ thin films via spray pyrolysis, revealing how deposition rate influences structure, optical band gap, and conductivity, with the highest rate yielding the lowest resistivity.

Contribution

It demonstrates the effect of spray pyrolysis deposition rate on WO$_3$ thin films' structural, optical, and electrical properties, including conductivity type and resistivity, which is a novel insight.

Findings

Higher deposition rates decrease string diameter.

Post-annealing transforms amorphous films into polycrystalline.

Increased spray rate reduces electrical resistivity.

Abstract

This study focuses on enhancing the electrical and thermoelectric properties of tungsten trioxide (WO$_3$) thin films using the spray pyrolysis technique. Three samples, namely A$_1$, A$_2$, and A$_3$, were prepared by depositing the films onto glass substrates at different deposition rates: R$_1=1$ mL/min, R$_2=3$ mL/min, and R$_3=7$ mL/min, respectively. Subsequently, the films underwent annealing at 500 $^\circ$C for 2 hours in air. A detailed investigation was conducted to analyze the structural, morphological, optical, and electrical properties of the $\mathrm{WO}_3$ thin films. The FE-SEM images revealed the formation of circular strings with varying diameters for all layers. The diameter of each string decreased as the deposition rate increased. XRD structural analysis indicated that, before annealing, sample R$_1$ exhibited a polycrystalline nature with mixed tetragonal-hexagonal phases, while the other two samples were amorphous. After annealing, sample A$_3$ also became polycrystalline. Moreover, the UV-Vis spectra analysis demonstrated a monotonic decrease in the band gap of the layers with increasing spray rate, potentially attributed to the attenuation of the quantum confinement effect. The Seebeck effect was used to authenticate the $n$-type conductivity of the WO$_3$ layers, as the Seebeck effect and conductivity exhibited a direct connection. Furthermore, the current-voltage variation was found to align with the oxygen vacancies sites. Remarkably, the sample A$_3$ with the highest deposition rate exhibited the lowest resistivity.