Visualizing buried local carrier diffusion in halide perovskite crystals via two-photon microscopy
Camille Stavrakas, G\'eraud Delport, Ayan A. Zhumekenov, Miguel Anaya,, Rosemonde Chahbazian, Osman M. Bakr, Edward S. Barnard, Samuel D. Stranks

TL;DR
This study introduces a two-photon microscopy technique to visualize and quantify local charge carrier diffusion in halide perovskite crystals, revealing buried defects affecting electronic transport crucial for device efficiency.
Contribution
Developed a photoluminescence tomography method to distinguish surface and bulk charge diffusion, uncovering buried defects and local heterogeneities in halide perovskites.
Findings
Diffusion coefficients range from 0.3 to 2 cm^2/s depending on local conditions.
Buried crystal defects act as barriers to charge transport.
Local heterogeneities significantly influence charge diffusion pathways.
Abstract
Halide perovskites have shown great potential for light emission and photovoltaic applications due to their remarkable electronic properties and compatibility with cost-effective fabrication techniques. Although the device performances are promising, they are still limited by microscale heterogeneities in their photophysical properties. In particular, the relation between local heterogeneities and the diffusion of charge carriers at the surface and in the bulk, crucial for efficient collection of charges in a light harvesting device, is not well understood. Here, a photoluminescence tomography technique is developed in a confocal microscope using one- and two-photon excitation to distinguish between local surface and bulk diffusion of charge carriers in methylammonium lead bromide single crystals. The local temporal diffusion is probed at various excitation depths to build statistics of…
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