Nanoscale ballistic diodes made of polar materials for amplification and generation of radiation in 10 THz-range

TL;DR

This study explores nanoscale polar semiconductor diodes that leverage phonon-electron interactions to achieve negative resistance and generate far-infrared radiation around 10 THz.

Contribution

It demonstrates the potential of polar material diodes for high-frequency radiation generation through resonant impedance effects.

Findings

Negative dynamic resistance near optical phonon frequency.

Resonant impedance effects in GaAs and InP diodes.

Potential for far-infrared radiation generation.

Abstract

We investigate ultra-high frequency electrical properties of nanoscale $n^+$-$i$-$n^+$ diodes made of polar semiconductors. The calculations show that the coupling between optical vibrations of the lattice and the ballistic electrons strongly modifies and enhances the time-of-flight effects giving rise to narrow resonances of the diode impedance in the reststrahlen frequency range. Particularly, negative dynamic resistance is induced in close proximity to the optical phonon frequency. The resonant effects in the dynamic resistance of nanoscale GaAs and InP diodes are studied in detail. The obtained magnitudes of the negative dynamic resistance effect indicate that the nanoscale diodes are capable of generating electromagnetic radiation in far-infrared spectral range under electric pumping.