Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators
Lin Chang, Weiqiang Xie, Haowen Shu, Qifan Yang, Boqiang Shen, Andreas, Boes, Jon D. Peters, Warren Jin, Songtao Liu, Gregory Moille, Su-Peng Yu,, Xingjun Wang, Kartik Srinivasan, Scott B. Papp, Kerry Vahala, and John E., Bowers

TL;DR
This paper demonstrates ultra-efficient Kerr frequency comb generation in AlGaAs-on-insulator microresonators with record low power thresholds, high quality factors, and broad comb spans, advancing integrated nonlinear photonics.
Contribution
It introduces an ultra-low loss AlGaAs-on-insulator platform with high Q factors, enabling highly efficient on-chip frequency combs with significantly reduced power thresholds.
Findings
Record low Kerr comb threshold of ~36 μW.
Generation of broad comb spans over 250 nm.
Observation of soliton-step transition in AlGaAs resonators.
Abstract
Recent advances in nonlinear optics have revolutionized the area of integrated photonics, providing on-chip solutions to a wide range of new applications. Currently, the state of the art integrated nonlinear photonic devices are mainly based on dielectric material platforms, such as Si3N4 and SiO2. While semiconductor materials hold much higher nonlinear coefficients and convenience in active integration, they suffered in the past from high waveguide losses that prevented the realization of highly efficient nonlinear processes on-chip. Here we challenge this status quo and demonstrate an ultra-low loss AlGaAs-on-insulator (AlGaAsOI) platform with anomalous dispersion and quality (Q) factors beyond 1.5*10^6. Such a high quality factor, combined with the high nonlinear coefficient and the small mode volume, enabled us to demonstrate a record low Kerr frequency comb generation threshold of…
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