A current-voltage characteristic of photoresistance. A plane case
Dimitar G. Stoyanov
TL;DR
This paper derives an analytical expression for the current-voltage characteristic of photoresistance in a uniformly illuminated semiconductor, enhancing understanding of photo-electron current formation.
Contribution
It provides a new analytical model for the current-voltage behavior of photoresistance in a plane, uniformly illuminated semiconductor.
Findings
Analytical form of the photoresistance current-voltage characteristic.
Insight into photo-electron current formation in volume of semiconductor.
Model applicable to uniform illumination scenarios.
Abstract
The formation of photo-electron current in the volume of semi-conductor material is investigated in this article. A plane case when a material is uniformly illuminated by light is considered. The current-voltage characteristic of a photo resistance is obtained in analytical form.
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Taxonomy
TopicsThermography and Photoacoustic Techniques