Mechanism for Embedded In-plane Self Assembled Nanowire Formation

TL;DR

This paper introduces a new growth mechanism for in-plane ErSb nanowires during molecular beam epitaxy, highlighting macrostep complexes' role and a surface energy model explaining the transition from out-of-plane to in-plane growth.

Contribution

It presents a novel in-plane nanowire formation mechanism involving macrosteps and a surface energy model for transition dynamics during MBE growth.

Findings

Macrostep complexes are integral to in-plane nanowire growth.

Critical film thickness triggers transition from out-of-plane to in-plane nanowires.

Surface energy minimization explains the growth transition.

Abstract

We report a novel growth mechanism that produces in-plane [1-10] oriented ErSb nanowires formed during codeposition of Er0.3Ga0.7Sb via molecular beam epitaxy (MBE). Nanowires are characterized by in-situ scanning tunneling microscopy (STM), as well as ex-situ transmission electron microscopy (TEM) and electron channeling contrast imaging (ECCI). We show that complexes of macrosteps with step heights on the order of 7 nm form during nanowire growth. The macrosteps are shown to be part of the in-plane nanowire growth process and are directly responsible for the observed stratified distribution of in-plane nanowires. TEM indicates that initial growth results in out-of-plane nanowires transitioning to in-plane nanowires after a critical film thickness. A surface energy model is put forward that shows the critical thickness is due to minimization of the GaSb{110} surfaces formed during out-of-plane nanowire growth. Kinetics of the transition are discussed with respect to observed features in STM, along with the material parameters needed to achieve in-plane nanowire growth.