Spin-Orbit-Torque Field-Effect Transistor (SOTFET): Proposal for a New Magnetoelectric Memory

TL;DR

The paper proposes the SOTFET device, which combines spin-based memory and semiconductor transistor functionalities to enhance energy efficiency and enable new capabilities in non-volatile memory technologies.

Contribution

Introduction of the SOTFET device that couples spin states to charge states using multiferroic materials, advancing spintronic memory technology.

Findings

Potential for significantly improved energy efficiency

Ability to provide large resistance changes

Enables new functionalities in memory devices

Abstract

Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high durability. The recent availability of multiferroic materials provides an opportunity to directly couple the change in spin states of a magnetic memory to a charge change in a semiconductor transistor. In this work, we propose and analyze the spin-orbit torque field-effect transistor (SOTFET), a device with the potential to significantly boost the energy efficiency of spin-based memories, and to simultaneously offer a palette of new functionalities.