Performance limitation of Si Nanowire solar cells: Effects of nanowire length and surface defects
Deepika Bora, Shrestha Bhattacharya, Nitin Kumar, Aishik Basu Mallick,, Avriti Srivastava, Mrinal Dutta, Sanjay K. Srivastava, P. Prathap, C.M.S., Rauthan

TL;DR
This study investigates how Si nanowire length and surface defects affect the efficiency of SiNW solar cells, highlighting the importance of surface defect reduction over light trapping for performance improvements.
Contribution
It demonstrates that reducing surface defects in SiNW arrays has a greater impact on cell efficiency than increasing nanowire length, offering insights for cost-effective solar cell production.
Findings
Surface defect reduction improves efficiency more than longer nanowires.
Efficiency mainly depends on short circuit current density.
Optimal nanowire length range identified for performance balance.
Abstract
In Si nanowire (SiNW) solar cells enhanced light confinement property in addition to decoupling of charge carrier collection and light absorption directions plays a significant role to resolve the draw backs of bulk Si solar cells. In this report we have studied the dependence of the phovoltaic properties of Si NW array solar cells on the SiNW length and enhanced surface defect states as a result of enhanced surface area of the NWs. The SiNW arrays have been fabricated using metal catalyzed electroless etching (MCEE) technique. p-n junction has been produced by spin-on-dopant technique followed by thermal diffusion process. Front and rear electrodes have been deposited by e-beam evaporation techniques. SiNW lengths have been controlled from ~ 320 nm to 6.4 micro meter by controlling the parameters of MCEE technique. Photovoltaic properties of the solar cells have been characterized by…
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