Evolution of Floquet Topological Quantum States in Driven Semiconductors

TL;DR

This paper explores how Floquet topological quantum states evolve in driven semiconductors, demonstrating the physical effects of non-equilibrium topological phenomena in correlated systems with potential optoelectronic applications.

Contribution

It introduces a framework combining Floquet-Keldysh theory with dynamical mean field theory to analyze non-equilibrium topological states in semiconductors.

Findings

Floquet topological states can be induced in driven semiconductors.

Non-equilibrium effects significantly influence topological properties.

Potential applications in optoelectronics are discussed.

Abstract

Spatially uniform excitations can induce Floquet topological bandstructures within insulators which have equal characteristics to those of topological insulators. Going beyond we demonstrate in this article the evolution of Floquet topological quantum states for electromagnetically driven semiconductor bulk matter. We show the direct physical impact of the mathematical precision of the Floquet-Keldysh theory when we solve the driven system of a generalized Hubbard model with our framework of dynamical mean field theory (DMFT) in the non-equilibrium. We explain the physical consequences of the topological non-equilibrium effects in our results for correlated sysems with impact on optoelectronic applications.