Large Resistivity Reduction in Mixed-Valent CsAuBr$_3$ Under Pressure
Pavel Naumov, Shangxiong Huangfu, Xianxin Wu, Andreas Schilling, Ronny, Thomale, Claudia Felser, Sergey Medvedev, Harald O. Jeschke, Fabian O. von, Rohr

TL;DR
This study investigates how applying high pressure drastically reduces resistivity in CsAuBr₃, revealing a transition from insulator to metal and then to semiconducting behavior, driven by band structure changes related to valence state transitions.
Contribution
It provides the first detailed high-pressure resistivity measurements on CsAuBr₃, identifying a large resistivity drop and elucidating the electronic band structure evolution responsible for this behavior.
Findings
Resistivity decreases by over 6 orders of magnitude below 10 GPa.
Transition from insulator to metal occurs below 10 GPa.
Resistivity stabilizes at high pressures above 14 GPa.
Abstract
We report on high-pressure GPa resistivity measurements on the perovskite-related mixed-valent compound CsAuBr. The compounds high-pressure resistivity can be classified into three regions: For low pressures ( GPa) an insulator to metal transition is observed; between GPa and 14 GPa the room temperature resistivity goes through a minimum and increases again; above GPa a semiconducting state is observed. From this pressure up to the highest pressure of GPa reached in this experiment, the room-temperature resistivity remains nearly constant. We find an extremely large resistivity reduction between ambient pressure and 10 GPa by more than 6 orders of magnitude. This decrease is among the largest reported changes in the resistivity for this narrow pressure regime. We show - by an analysis of the electronic band structure evolution of this…
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