Carrier Density Oscillation in photoexcited Semiconductors

TL;DR

This paper reports the direct ultrafast imaging of carrier density oscillations in photoexcited silicon, revealing nonlinear oscillatory transport driven by internal electric fields, and introduces an advection-diffusion model to explain this phenomenon.

Contribution

It provides the first direct imaging evidence of electrostatic oscillations of hot carriers in highly excited semiconductors and models their spatiotemporal evolution.

Findings

Carrier transport becomes oscillatory at high excitation fluence.

Electric fields cause spatial separation and oscillation of carriers.

The advection-diffusion model replicates experimental observations.

Abstract

The perturbation of a semiconductor from the thermodynamic equilibrium often leads to the display of nonlinear dynamics and formation of spatiotemporal patterns due to the spontaneous generation of competing processes. Here, we describe the ultrafast imaging of nonlinear carrier transport in silicon, excited by an intense femtosecond laser pulse. We use scanning ultrafast electron microscopy (SUEM) to show that, at a sufficiently high excitation fluence, the transport of photoexcited carriers slows down by turning into an oscillatory process. We attribute this nonlinear response to the electric field, generated by the spatial separation of these carriers under intrinsic and photo-induced fields; we then provide an advection-diffusion model that mimics the experimental observation. Our finding provides a direct imaging evidence for the electrostatic oscillation of hot carriers in highly excited semiconductors and offers new insights into their spatiotemporal evolution as the equilibrium is recovered.