Modelling thermoelectric performance in nanoporous nanocrystalline silicon
Laura de Sousa Oliveira, Vassilios Vargiamidis, and Neophytos, Neophytou

TL;DR
This study theoretically investigates how nanostructuring, specifically porosity and grain boundaries, affects thermoelectric performance in silicon by balancing thermal conductivity reduction against charge carrier scattering.
Contribution
It provides a detailed analysis of the tradeoffs in thermoelectric performance due to nanostructuring in silicon using molecular dynamics and Green's function methods.
Findings
Thermal conductivity reduction exceeds power factor decrease at low porosities.
Including grain boundaries enhances ZT figure of merit.
Porosity and grain boundaries can be engineered to optimize thermoelectric efficiency.
Abstract
Introducing hierarchical disorder from multiple defects into materials through nanostructuring is one of the most promising directions to achieve extremely low thermal conductivities and thus improve thermoelectric performance. The success of nanostructuring relies on charge carriers having shorter mean-free-paths than phonons so that the latter can be selectively scattered. Nevertheless, introducing disorder into a material often comes at the expense of scattering charge carriers as well as phonons. In order to determine the tradeoff between the degradation of the lattice thermal conductivity and of the power factor due to this, we perform a theoretical investigation of both phonon and electron transport in nanocrystalline, nanoporous Si geometries. We use molecular dynamics for phonon transport calculations and the non-equilibrium Green's function method for electronic transport. We…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
