Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts

TL;DR

This paper demonstrates that ferromagnetic metal contacts on monolayer MoS2 can achieve extremely low Schottky barrier heights, enabling ohmic contact behavior crucial for high-performance spintronic devices.

Contribution

It reports the lowest Schottky barrier height for ferromagnetic Py/MoS2 contacts and shows gate-tunable contact properties, advancing MoS2-based spintronics.

Findings

Schottky barrier height as low as +28.8 meV at zero bias

Gate voltage reduces SBH to -6.8 meV, indicating ohmic contact behavior

Direct growth of MoS2 enables controlled contact properties

Abstract

Two-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS2 interface still remains an open issue. Here, we report electronic properties of field effect transistor devices using monolayer MoS2 channels and permalloy (Py) as ferromagnetic (FM) metal contacts. Monolayer MoS2 channels were directly grown on SiO2/Si substrate via chemical vapor deposition technique. The increase in current with back gate voltage shows the tunability of FET characteristics. The Schottky barrier height (SBH) estimated for Py/MoS2 contacts is found to be +28.8 meV (zero-bias), which is the smallest value reported so-far for any direct metal (magnetic or non-magnetic)/monolayer MoS2 contact. With the application of gate voltage (+10 V), SBH shows a drastic reduction down to a value of -6.8 meV. The negative SBH reveals ohmic behavior of Py/MoS2 contacts. Low SBH with controlled ohmic nature of FM contacts is a primary requirement for MoS2 based spintronics and therefore using directly grown MoS2 channels in the present study can pave a path towards high performance devices for large scale applications.