Gallium Nitride FET Model
G.I. Zebrev, V.V. Orlov
TL;DR
This paper introduces an analytical compact model for GaN power FETs that accurately predicts I-V characteristics across all operation modes, accounting for resistance, traps, and heating effects.
Contribution
The paper presents a novel physics-based compact model for GaN FETs that incorporates multiple physical effects for improved accuracy.
Findings
Model accurately describes I-V characteristics
Includes effects of source-drain resistance and traps
Accounts for self-heating effects
Abstract
We have presented an analytical physics-based compact model of GaN power FET, which can accurately describe the I-V characteristics in all operation modes. The model considers the source-drain resistance, different interface trap densities and self-heating effects.
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