Chemical bonding in chalcogenides: the concept of multi-centre hyperbonding
T. H. Lee, S. R. Elliott

TL;DR
This paper introduces the concept of multi-centre hyperbonding in chalcogenides, revealing how delocalized electron interactions influence material properties and phase differences, aiding in the design of better chalcogenide materials.
Contribution
It presents a new chemical-bonding framework based on multi-centre hyperbonding, derived from DFT-MD simulations, to explain bonding and properties in chalcogenides.
Findings
Identification of multi-centre hyperbonding interactions
Explanation of property differences between amorphous and crystalline phases
Revealing similar bonding nature in crystalline and amorphous PCMs
Abstract
The precise nature of chemical-bonding interactions in amorphous, and crystalline, chalcogenides is still unclear due to the complexity arising from the delocalization of bonding, and non-bonding, electrons. Although an increasing degree of electron delocalization for elements down a column of the periodic table is widely recognized, its influence on chemical-bonding interactions, and on consequent material properties, of chalcogenides has not previously been comprehensively understood from an atomistic point of view. Here, we provide a chemical-bonding framework for understanding the behaviour of chalcogenides (and, in principle, other lone-pair materials) by studying prototypical Telluride non-volatile-memory, 'phase-change' materials (PCMs), and related chalcogenide compounds, via density-functional-theory, molecular-dynamics (DFT-MD) simulations. Identification of the presence of…
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