Controllable p$-$n junctions in three$-$dimensional Dirac semimetal Cd$_3$As$_2$ nanowires

TL;DR

This paper demonstrates a controllable p-n junction in a 3D Dirac semimetal nanowire, revealing tunable conductance regimes, magnetic field effects, and quantum dot behavior, advancing quantum device potential.

Contribution

It introduces a method to create and control p-n junctions in Dirac semimetal nanowires with gate tuning and magnetic field effects, showing quantum phenomena.

Findings

Four conductance regimes identified with gate voltages.

Magnetic field suppresses Klein tunneling, inducing quantum dot behavior.

High magnetic fields produce conductance plateaus due to cyclotron motion.

Abstract

We demonstrate a controllable p$-$n junction in a three$-$dimensional Dirac semimetal (DSM) Cd$_3$As$_2$ nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n$-$n and p$-$p) regime and the bipolar (n$-$p and n$-$p) one, where p$-$n junctions are formed. The conductance in the p$-$n junction regime decreases drastically when a magnetic field is applied perpendicular to the nanowire, which is due to the suppression of Klein tunneling. In this regime, the device shows quantum dot behavior. On the other hand, clear conductance plateaus are observed in the n$-$n regime likely owing to the cyclotron motion of carriers at high magnetic fields. Our experiment shows that the ambipolar tunability of DSM nanowires can enable the realization of quantum devices based on quantum dots and electron optics.