Three-dimensionality of mobile electrons at X-ray-irradiated LaAlO$_3$/SrTiO$_3$ interfaces
V. N. Strocov, M.-A. Husanu, A. Chikina, L. L. Lev, V. A. Rogalev, T., Schmitt, and F. Lechermann

TL;DR
This study reveals that X-ray irradiation induces a three-dimensional electron system at LaAlO$_3$/SrTiO$_3$ interfaces, contrasting with the typical two-dimensional behavior, and explores possible mechanisms behind this phenomenon.
Contribution
The paper demonstrates the emergence of a 3D mobile electron system at LAO/STO interfaces after X-ray irradiation, supported by experimental ARPES data and DFT calculations, revealing new insights into interface electronic structures.
Findings
X-ray irradiation creates a 3D electron system in LAO/STO.
The 3D character extends into the STO depth, unlike standard samples.
Possible mechanisms include oxygen vacancies, photoconductivity, and Frenkel pairs.
Abstract
Effects of X-ray irradiation on the electronic structure of LaAlO/SrTiO (LAO/STO) samples, grown at low oxygen pressure and post-annealed ex-situ till recovery of their stoichiometry, were investigated by soft-X-ray ARPES. The irradiation at low sample temperature below ~100K creates oxygen vacancies (VOs) injecting Ti t2g-electrons into the interfacial mobile electron system (MES). At this temperature the oxygen out-diffusion is suppressed, and the VOs are expected to appear mostly in the top STO layer. However, we observe a pronounced three-dimensional (3D) character of the X-ray generated MES in our samples, indicating its large extension into the STO depth, which contrasts to the purely two-dimensional (2D) character of the MES in standard stoichiometric LAO/STO samples. Based on self-interaction-corrected DFT calculations of the MES induced by VOs at the interface and in…
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Taxonomy
TopicsElectronic and Structural Properties of Oxides · Magnetic and transport properties of perovskites and related materials · Semiconductor materials and devices
