Epitaxial Growth of 2D Layered Transition Metal Dichalcogenides

TL;DR

This paper reviews the fundamental aspects, current status, and future directions of wafer-scale epitaxial growth of transition metal dichalcogenide monolayers and heterostructures, emphasizing structural, electronic, and fabrication challenges.

Contribution

It provides a comprehensive review of the epitaxial growth techniques, substrate interactions, and characterization methods specific to TMD films, highlighting recent advancements and future research directions.

Findings

Epitaxial growth methods for TMDs are advancing with improved substrate compatibility.

Characterization techniques for large-area TMD films are being developed.

Future research focuses on heterostructure growth and in situ characterization.

Abstract

Transition metal dichalcogenide (TMD) monolayers and heterostructures have emerged as a compelling class of materials with transformative new science that may be harnessed for novel device technologies. These materials are commonly fabricated by exfoliation of flakes from bulk crystals, but wafer-scale epitaxy of single crystal films is required to advance the field. This article reviews the fundamental aspects of epitaxial growth of van der Waals bonded crystals specific to TMD films. The structural and electronic properties of TMD crystals are initially described along with sources and methods used for vapor phase deposition. Issues specific to TMD epitaxy are critically reviewed including substrate properties and film-substrate orientation and bonding. The current status of TMD epitaxy on different substrate types is discussed along with characterization techniques for large area epitaxial films. Future directions are proposed including developments in substrates, in situ and full wafer characterization techniques and heterostructure growth.