Flux Free Single Crystal Growth and Detailed Physical Property Characterization of Bi1-xSbx (x = 0.05, 0.1 and 0.15) Topological Insulator

TL;DR

This study reports the synthesis and detailed physical characterization of Bi1-xSbx topological insulator single crystals with varying Sb content, revealing high magnetoresistance and weak anti-localization effects relevant for technological applications.

Contribution

It presents a simple flux method for growing high-quality Bi1-xSbx crystals and provides comprehensive analysis of their structural, vibrational, and transport properties, highlighting their potential in topological insulator research.

Findings

High MR values up to 1400% at 2K and 6T for x=0.05

Observation of weak anti-localization in magneto-conductivity analysis

Crystalline rhombohedral structure confirmed by XRD

Abstract

Here, we report the crystal growth, physical and transport properties of Bi1-xSbx (x = 0.05, 0.1 and 0.15) topological insulator. Single crystals of Bi1-xSbx (x = 0.05, 0.1 and 0.15) were grown by melting bismuth and antimony together using the facile self flux method. The XRD measurements displayed highly indexed 00l lines and confirmed the crystalline nature as well as the rhombohedral structure of the Bi1-xSbx (x = 0.05, 0.1 and 0.15) crystals. Raman spectroscopy measurements for Bi1-xSbx system revealed four peaks within the spectral range of 10 to 250 cm-1 namely A1g and Eg modes corresponding to Bi-Bi and Sb-Sb vibrations. Scanning electron microscopy (SEM) and energy dispersive Temperature dependent electrical resistivity curves with and without applied magnetic field exhibited a metallic behaviour and linear non-saturating magneto-resistance (MR) respectively for all the antimony (Sb) concentrations of x = 0.05, 0.1 and 0.15. The lowest Sb concentration sample with x = 0.05 (Bi0.95Sb0.05) exhibited the highest MR value of about 1400%, followed by x = 0.1 and 0.15 samples (Bi0.9Sb0.1 and Bi0.85Sb0.05) with MR values reaching up to 500% and 110% respectively at 2K and 6Tesla applied field. The magneto-conductivity (MC) is fitted to the HLN (Hikami Larkin Nagaoka) equation and it is found that the charge conduction mechanism is mainly dominated by WAL (weak anti-localization) along with a small contribution from WL (weak localization) effect. Summarily, the short letter discusses the synthesis, interesting transport and magneto-transport properties of Bi1-xSbx (x = 0.05, 0.1 and 0.15), which could be useful in understanding the fascinating properties of topological insulators and their technological applications.