Torus Breakdown in a Uni Junction Memristor

TL;DR

This paper experimentally confirms that a uni junction transistor (UJT) functions as a memristor and introduces a new dynamical system to model complex behaviors like torus breakdown.

Contribution

It demonstrates the UJT's memristor properties and proposes a novel four-dimensional model for its complex dynamical phenomena.

Findings

UJT exhibits memristor-like DC characteristics

A new dynamical system models UJT behavior

Observation of transition from limit cycle to torus breakdown

Abstract

Experimental study of a uni junction transistor (UJT) has enabled to show that this electronic component has the same features as the so-called "memristor". So, we have used the memristor's direct current (DC) vM--iM characteristic for modeling the UJT's DC current--voltage characteristic. This has led us to confirm on the one hand, that the UJT is a memristor and, on the other hand, to propose a new four-dimensional autonomous dynamical system allowing to describe experimentally observed phenomena such as the transition from a limit cycle to torus breakdown.