Mask-less Patterning of Gallium-irradiated Superconducting Silicon Using Focused Ion Beam

TL;DR

This paper presents a mask-less focused ion beam technique to directly pattern gallium-irradiated superconducting silicon, enabling simple fabrication of superconducting devices with sharp transitions at 7 K and potential for higher onset temperatures.

Contribution

It introduces a novel mask-less patterning method using focused gallium-ion beams for superconducting silicon, avoiding traditional lithography processes.

Findings

Superconducting transitions observed at 7 K in patterned silicon.

Line pattern shows onset temperature above 10 K.

Critical dose for superconductivity determined.

Abstract

A direct patterning technique of gallium-irradiated superconducting silicon has been established by focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line and square shaped patterns of gallium-irradiated silicon were carried out under self-field and magnetic field up to 7 T. Sharp superconducting transitions were observed in both patterns at temperature of 7 K. The line pattern exhibited a signature of higher onset temperature above 10 K. A critical dose amount to obtain the superconducting gallium-irradiated silicon was investigated by the fabrication of various samples with different doses. This technique can be used as a simple fabrication method for superconducting device.