Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble
David van Treeck, Johannes Ledig, Gregor Scholz, Jonas L\"ahnemann,, Mattia Musolino, Abbes Tahraoui, Oliver Brandt, Andreas Waag, Henning, Riechert, Lutz Geelhaar

TL;DR
This study combines electroluminescence and I-V measurements of individual (In,Ga)N/GaN nanowire LEDs within an ensemble, enabling detailed analysis of efficiency and current distribution at the single-wire level.
Contribution
It introduces a novel measurement approach that correlates single nanowire electroluminescence with current density, improving ensemble LED characterization.
Findings
Single nanowire spectra show multiple emission lines from different quantum wells.
The I-V characteristics fit the modified Shockley equation well.
The method allows accurate determination of the number of active nanowires and their current densities.
Abstract
We present the combined analysis of the electroluminescence (EL) as well as the current-voltage (I-V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown by molecular beam epitaxy. The data were acquired in a scanning electron microscope equipped with a micromanipulator and a luminescence detection system. Single NW spectra consist of emission lines originating from different quantum wells, and the width of the spectra increases with decreasing peak emission energy. The corresponding I-V characteristics are described well by the modified Shockley equation. The key advantage of this measurement approach is the possibility to correlate the EL intensity of a single NW LED with the actual current density in this NW. This way, the external quantum efficiency (EQE) can be investigated as a function of the…
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