Single-electron tunneling PbS/InP neuromorphic computing building blocks

TL;DR

This paper investigates PbS/InP single-electron tunneling junctions that exhibit Coulomb blockade and memory effects, proposing their potential as energy-efficient, high-frequency neuromorphic computing components.

Contribution

It introduces a novel application of SET in PbS/InP junctions for neuromorphic computing, with predicted low energy consumption and high operational frequency.

Findings

Minimum energy for synaptic operation ~1 fJ

Maximum operation frequency in MHz range

Observation of Coulomb-blockade and memory behaviors

Abstract

We study single-electron tunneling (SET) characteristics in crystalline PbS/InP junctions, that exhibit single-electron Coulomb-blockade staircases along with memory and memory-fading behaviors. This gives rise to both short-term and long-term plasticities as well as a convenient non-linear response, making this structure attractive for neuromorphic computing applications. For further insights into this prospect, we predict typical behaviors relevant to the field, obtained by an extrapolation of experimental data in the SET framework. The estimated minimum energy required for a synaptic operation is in the order of 1 fJ, while the maximum frequency of operation can reach the MHz range.