Artificial Spin Ice Phase-Change Memory Resistors

TL;DR

This paper explores how artificial spin ice nanowires exhibit memristor-like memory effects due to spin configurations and phase-change mechanisms, impacting their resistive states and potential applications.

Contribution

It introduces novel insights into spin-induced resistance changes and memristive behavior in artificial spin ice nanowires, highlighting mechanisms for dynamic resistive states.

Findings

Memory behavior with I-V hysteresis observed.

Spin configurations influence resistive states.

Thermal and athermal mechanisms induce resistance changes.

Abstract

We study the implications of the anisotropic magnetic resistance on permalloy nanowires, and in particular on the property of the resistance depending on the type of lattice. We discuss how the internal spin configuration of artificial spin ice nanowires can affect their effective resistive state, and which mechanisms can introduce a current-dependent effect dynamic resistive state. We discuss a spin-induced thermal phase-change mechanism, and an athermal domain-wall spin inversion. In both cases we observe memory behavior reminiscent of a memristor, with an I-V hysteretic pinched behavior.